
Image shown is a representation only.
Manufacturer | Infineon Technologies |
---|---|
Manufacturer's Part Number | BFR193L3E6327XTMA1 |
Description | NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .58 W; Maximum Collector Current (IC): .08 A; |
Datasheet | BFR193L3E6327XTMA1 Datasheet |
In Stock | 620,264 |
NAME | DESCRIPTION |
---|---|
Nominal Transition Frequency (fT): | 8000 MHz |
Package Body Material: | UNSPECIFIED |
Maximum Collector Current (IC): | .08 A |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | AMPLIFIER |
Surface Mount: | YES |
Terminal Finish: | GOLD |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .58 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CHIP CARRIER |
JESD-30 Code: | R-XBCC-N3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Highest Frequency Band: | L BAND |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | COLLECTOR |
Moisture Sensitivity Level (MSL): | 1 |
Polarity or Channel Type: | NPN |
Minimum DC Current Gain (hFE): | 70 |
JESD-609 Code: | e4 |
Maximum Collector-Emitter Voltage: | 12 V |
Additional Features: | LOW NOISE |
Maximum Collector-Base Capacitance: | .9 pF |
Reference Standard: | AEC-Q101 |