Infineon Technologies - BFR193L3E6327XTMA1

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BFR193L3E6327XTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BFR193L3E6327XTMA1
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .58 W; Maximum Collector Current (IC): .08 A;
Datasheet BFR193L3E6327XTMA1 Datasheet
In Stock620,264
NAME DESCRIPTION
Nominal Transition Frequency (fT): 8000 MHz
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): .08 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
Terminal Finish: GOLD
No. of Terminals: 3
Maximum Power Dissipation (Abs): .58 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Highest Frequency Band: L BAND
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Other Names: BFR193L3E6327XTMA1DKR
BFR 193L3 E6327CT
BFR193L3E6327XTMA1CT
BFR 193L3 E6327-ND
BFR 193L3 E6327CT-ND
BFR 193L3 E6327TR-ND
BFR 193L3 E6327DKR
BFR 193L3 E6327
BFR193L3E6327XTMA1TR
2156-BFR193L3E6327XTMA1-448
BFR193L3E6327XT
SP000013557
BFR 193L3 E6327DKR-ND
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 70
JESD-609 Code: e4
Maximum Collector-Emitter Voltage: 12 V
Additional Features: LOW NOISE
Maximum Collector-Base Capacitance: .9 pF
Reference Standard: AEC-Q101
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Pricing (USD)

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