Infineon Technologies - BFR360FH6765XTSA1

  1. Home
  2. Infineon Technologies - BFR360FH6765XTSA1
BFR360FH6765XTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BFR360FH6765XTSA1
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Collector Current (IC): .035 A; Package Style (Meter): SMALL OUTLINE;
Datasheet BFR360FH6765XTSA1 Datasheet
In Stock680
NAME DESCRIPTION
Nominal Transition Frequency (fT): 14000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .035 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 6 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: LOW NOISE
Highest Frequency Band: S BAND
Maximum Collector-Base Capacitance: .5 pF
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
680 $0.070 $47.600

Popular Products

Category Top Products

MMBR5031LT1 by Motorola

MMBR5031LT1

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .02 A; Maximum Power Dissipation Ambient: .3 W;
934064616115 by NXP Semiconductors

934064616115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;
TIS110 by Texas Instruments

TIS110

Texas Instruments

TIS110 by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 0.36W and max collector-emitter voltage of 40V, it operates at up to 150°C. Featuring a nominal transition frequency of 350MHz, it is housed in a cylindrical package suitable for RF small signal amplification.
BFU550AVL by NXP Semiconductors

BFU550AVL

NXP Semiconductors

The NXP Semiconductors BFU550AVL is a RF Small Signal BJT transistor with NPN polarity. It is a single configuration amplifier, suitable for L Band applications. With a max operating temperature of 150°C and a nominal transition frequency of 11 GHz, it offers high performance in a small outline package.
PN5179 by Onsemi

PN5179

Onsemi

PN5179 by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.4V and min Gp of 15dB, ideal for amplifier applications in the very high frequency band. It has a max power dissipation of 0.6W, operating temperature up to 150 °C, and a transition frequency of 900MHz.
MMBTH10-4LT1G by Onsemi

MMBTH10-4LT1G

Onsemi

MMBTH10-4LT1G by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 800MHz. Ideal for ultra-high frequency applications, it has a small outline package, matte tin finish, and operates up to 150°C.
JAN2N2907A by Vpt Components

JAN2N2907A

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Maximum Collector-Emitter Voltage: 60 V; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
SD1169 by STMicroelectronics

SD1169

STMicroelectronics

NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 6 A; Transistor Element Material: SILICON;
BFR520T/R by NXP Semiconductors

BFR520T/R

NXP Semiconductors

NXP Semiconductors' BFR520T/R is a NPN RF BJT transistor with 3 terminals. It operates in L Band, with fT of 9000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle a max collector current of 0.07 A.
2SC5415AE-TD-E by Onsemi

2SC5415AE-TD-E

Onsemi

RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30;
MMBT918LT1 by Onsemi

MMBT918LT1

Onsemi

MMBT918LT1 by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It has a max IC of 0.05 A and operates up to 150 °C, making it suitable for ultra-high frequency amplifier applications in small outline packages.
BFU520XRR by NXP Semiconductors

BFU520XRR

NXP Semiconductors

The NXP Semiconductors BFU520XRR is a RF BJT transistor with NPN polarity, ideal for amplifier applications in the L band. It has a max operating temperature of 150°C, fT of 10500 MHz, and can handle a collector-emitter voltage of 16V. This small outline transistor features gull wing terminals and is surface mountable.
50A02SP by Onsemi

50A02SP

Onsemi

The Onsemi 50A02SP is a PNP RF BJT transistor with max. Vce of 50V and Ic of 0.5A. Ideal for switching applications, it has fT of 690MHz and comes in a plastic/epoxy package with through-hole terminals.
CA3086M by Harris Semiconductor

CA3086M

Harris Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Emitter Voltage: 15 V;
NESG260234-T1 by Renesas Electronics

NESG260234-T1

Renesas Electronics

Renesas Electronics' NESG260234-T1 is an NPN BJT transistor with a max collector-emitter voltage of 9.2V and a max operating temperature of 150°C. It is designed for ultra-high frequency band applications, featuring a single configuration in a small outline package suitable for surface mount assembly.
LA733Q by Onsemi

LA733Q

Onsemi

LA733Q by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 1.5W, hFE of 135, and fT of 100MHz. The package is cylindrical with through-hole terminals and can operate up to 150 °C.
BSX29 by STMicroelectronics

BSX29

STMicroelectronics

BSX29 by STMicroelectronics is a PNP RF small signal BJT designed for switching applications. It features a max power dissipation of 0.36 W, operates up to 150 °C, and has a nominal transition frequency of 700 MHz. Ideal for compact electronic circuits requiring efficient signal control.
MCH4021 by Onsemi

MCH4021

Onsemi

Onsemi's MCH4021 is an NPN BJT with max. power dissipation of 0.4W, hFE of 60, and fT of 13GHz. Ideal for RF applications, it operates at up to 150 °C with a max. collector current of 0.15A in a surface-mount configuration.
TIS64A by Texas Instruments

TIS64A

Texas Instruments

TIS64A by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the very high frequency band. It has a max power dissipation of 0.5W, operating temperature up to 150°C, and a transition frequency of 500MHz. The package style is cylindrical with a plastic/epoxy body material and wire terminals.
BFR360FH6765XTSA1 by Infineon Technologies

BFR360FH6765XTSA1

Infineon Technologies

BFR360FH6765XTSA1 by Infineon Technologies is a NPN RF BJT transistor with a max fT of 14 GHz. It has a collector-emitter voltage of 6V and collector current of 0.035A, making it suitable for amplifier applications in the S band. This surface-mount transistor comes in a small outline package with 3 terminals.