Infineon Technologies - BFS17S

  1. Home
  2. Infineon Technologies - BFS17S
BFS17S by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BFS17S
Description NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): .025 A; Package Shape: RECTANGULAR;
Datasheet BFS17S Datasheet
In Stock816
NAME DESCRIPTION
Nominal Transition Frequency (fT): 2500 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .025 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 20
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 15 V
Maximum Collector-Base Capacitance: .8 pF
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
816 - -

Popular Products

Category Top Products

S822T by Vishay Telefunken

S822T

Vishay Telefunken

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5200 MHz; Maximum Collector Current (IC): .008 A; Transistor Element Material: SILICON;
BFR92AW by Temic Semiconductors

BFR92AW

Temic Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; No. of Elements: 1;
BF495C by Micro Electronics

BF495C

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .03 A;
BFP620FE7764 by Infineon Technologies

BFP620FE7764

Infineon Technologies

BFP620FE7764 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, operating in the C band up to 65 GHz. It has a max collector-emitter voltage of 2.3V and collector current of 0.08A, making it suitable for high-frequency applications like wireless communication systems. The package is surface mountable with a small outline shape and matte tin finish.
MMBTH24-7-F by Diodes Incorporated

MMBTH24-7-F

Diodes Incorporated

Diodes Inc. MMBTH24-7-F is a NPN BJT transistor for RF applications. Features include 400MHz fT, 40V VCEO, and 0.3W Ptot. Ideal for ultra-high frequency amplification in compact SOT package with Gull Wing terminals.
BFR93AR by Vishay Telefunken

BFR93AR

Vishay Telefunken

RF Small Signal Bipolar Transistors; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G3; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
CA3083M96 by Intersil

CA3083M96

Intersil

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G16;
HFA3134IHZ96 by Renesas Electronics

HFA3134IHZ96

Renesas Electronics

Renesas Electronics' HFA3134IHZ96 is an NPN RF BJT with 2 elements, ideal for amplifier applications in the UHF band. Features include VCEsat of 0.25V, hFE of 48, and fT of 3000MHz. With a max operating temp of 85°C and compact SOT package, it's suitable for high-frequency circuit designs.
NSVF3007SG3T1G by Onsemi

NSVF3007SG3T1G

Onsemi

NSVF3007SG3T1G by Onsemi is an NPN BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.35W, hFE of 60, and fT of 8000MHz. Suitable for surface mount design with a max operating temp of 150 °C.
BFU530WX by NXP Semiconductors

BFU530WX

NXP Semiconductors

The NXP Semiconductors BFU530WX is an RF BJT transistor with NPN polarity, suitable for amplifier applications in the L Band. It has a max operating temperature of 150°C, a collector-emitter voltage of 12V, and a transition frequency of 11GHz. This small outline transistor comes in a plastic/epoxy package with gull wing terminals for surface mount assembly.
MPS918RL by Onsemi

MPS918RL

Onsemi

MPS918RL by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and a nominal transition frequency of 600MHz. It is designed for amplifier applications in the ultra-high-frequency band, featuring a max operating temperature of 150 °C. This through-hole transistor has a package style of cylindrical shape with three terminals.
15GN03FA-TL-H by Onsemi

15GN03FA-TL-H

Onsemi

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1;
MPS5179RLRPG by Onsemi

MPS5179RLRPG

Onsemi

MPS5179RLRPG by Onsemi is an NPN RF BJT transistor with a max fT of 900 MHz. It has a max IC of 0.05 A and Ptot of 0.2 W, making it suitable for amplifier applications in the VHF band. The package is cylindrical with through-hole terminals and can operate up to 150 °C.
2N2368 by STMicroelectronics

2N2368

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;
BFQ256-T by NXP Semiconductors

BFQ256-T

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .3 A; Terminal Position: SINGLE;
2N3643 by Swampscott Electronics

2N3643

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
SD1127 by STMicroelectronics

SD1127

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0;
934067698215 by NXP Semiconductors

934067698215

NXP Semiconductors

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
934067703215 by NXP Semiconductors

934067703215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;
NESG260234-T1 by Nec Compound Semiconductor Devices

NESG260234-T1

Nec Compound Semiconductor Devices

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSSO-F3;