Infineon Technologies - BFY196ESZZZA1

  1. Home
  2. Infineon Technologies - BFY196ESZZZA1
BFY196ESZZZA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BFY196ESZZZA1
Description RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet BFY196ESZZZA1 Datasheet
In Stock776
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
776 - -

Popular Products

Category Top Products

BFR93AR,215 by NXP Semiconductors

BFR93AR,215

NXP Semiconductors

NXP Semiconductors' BFR93AR,215 is a NPN RF BJT transistor with 3 terminals. It operates in C band with fT of 6000 MHz and hFE of 40. Ideal for amplifier applications, it has a max power dissipation of 0.3W and can handle up to 12V collector-emitter voltage.
MPS5179RLRP by Onsemi

MPS5179RLRP

Onsemi

MPS5179RLRP by Onsemi is a NPN RF BJT with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.2W, hFE of 25, and fT of 900MHz. The transistor operates at up to 150 °C, with VCE(max) of 12V and IC(max) of 0.05A.
CPH6003A-TL-E by Sanyo Semiconductor

CPH6003A-TL-E

Sanyo Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 100;
BFG21W,115 by NXP Semiconductors

BFG21W,115

NXP Semiconductors

NXP Semiconductors BFG21W,115 is an NPN RF BJT transistor with 18000 MHz fT. It has a max power dissipation of 0.67 W and operates at up to 150 °C. Ideal for amplifier applications in the ultra-high frequency band, this transistor features a small outline package with GULL WING terminals.
2N2857 by STMicroelectronics

2N2857

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .04 A;
HFA3046BZ by Intersil

HFA3046BZ

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Collector-Emitter Voltage: 8 V;
TIS125 by Texas Instruments

TIS125

Texas Instruments

TIS125 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.25W, hFE of 30, and fT of 450MHz. It is used in RF applications due to its very high frequency band capability, operating at up to 150°C with a VCE max of 30V.
KSC1730O by Onsemi

KSC1730O

Onsemi

KSC1730O by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications in the UHF band. It has a min hFE of 70, max fT of 1100MHz, and can handle a max IC of 0.05A.
BFU550XRR by NXP Semiconductors

BFU550XRR

NXP Semiconductors

BFU550XRR by NXP Semiconductors is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It features a max operating temperature of 150°C, collector-emitter voltage of 12V, and transition frequency of 11GHz. This small outline package with Gull Wing terminals is ideal for surface mount designs requiring high-frequency performance.
MPS6507RL1 by Onsemi

MPS6507RL1

Onsemi

MPS6507RL1 by Onsemi is an NPN RF BJT with 20V VCEO, 2.5pF CBC, and 800MHz fT. Ideal for amplifier applications, it has a max operating temp of 150 °C. This through-hole transistor comes in a cylindrical package with tin-lead finish.
MCH4013-TL-E by Onsemi

MCH4013-TL-E

Onsemi

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin/Bismuth (Sn/Bi);
NTE2402 by Nte Electronics

NTE2402

Nte Electronics

NTE2402 by Nte Electronics is an RF BJT transistor with NPN polarity, suitable for amplifier applications. It operates in the ultra-high frequency band up to 5000 MHz, with a max collector-emitter voltage of 15V and a power dissipation of 0.2W. The package is small outline, surface mountable, with Gull Wing terminals.
NSVMMBTH81LT1G by Onsemi

NSVMMBTH81LT1G

Onsemi

NSVMMBTH81LT1G by Onsemi is a PNP BJT transistor for amplifier applications. It operates in the very high-frequency band with a max fT of 600 MHz. With a VCEsat of 0.5V and hFE of 60, it offers efficient performance in small outline packages.
KSC2223Y by Onsemi

KSC2223Y

Onsemi

KSC2223Y by Onsemi is an NPN RF BJT transistor with a VCEsat of 0.3V, hFE of 90, and fT of 600MHz. Ideal for amplifier applications in the very high-frequency band, it has a max operating temp of 150 °C and max collector current of 0.02A.
MCH4015-TL-H by Onsemi

MCH4015-TL-H

Onsemi

MCH4015-TL-H by Onsemi is a NPN RF BJT with 4 terminals, operating up to 150°C. It has a transition frequency of 10GHz and can handle a collector-emitter voltage of 12V. Ideal for X band applications, this transistor offers a max power dissipation of 0.45W in a small outline package.
BFS17W by Infineon Technologies

BFS17W

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;
2N2907 by Solid State Devices

2N2907

Solid State Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
MCH4017 by Onsemi

MCH4017

Onsemi

The Onsemi MCH4017 is an NPN RF BJT with a max. power dissipation of 0.45W, suitable for UHF applications. With a min. DC current gain of 60 and max. collector-emitter voltage of 12V, it operates at up to 150 °C, making it ideal for high-frequency circuits in small outline packages.
MCH6001-TL-E by Sanyo Semiconductor

MCH6001-TL-E

Sanyo Semiconductor

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 16 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .15 A;
934067707235 by NXP Semiconductors

934067707235

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;