BG3130 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BG3130
Description	N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; JESD-30 Code: R-PDSO-G6; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 12 V;
Datasheet	BG3130 Datasheet
In Stock	800

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.025 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	6
Minimum DS Breakdown Voltage:	12 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DUAL GATE, DEPLETION MODE
Additional Features:	LOW NOISE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	.025 A
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
800	-	-

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