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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BG3130H6327XTSA1 |
| Description | N-CHANNEL; Surface Mount: YES; JESD-30 Code: R-PDSO-G6; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: DUAL GATE, DEPLETION MODE; Package Style (Meter): SMALL OUTLINE; |
| Datasheet | BG3130H6327XTSA1 Datasheet |
| In Stock | 705 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
BG 3130 H6327-ND 2156-BG3130H6327XTSA1-ITTR INFINFBG3130H6327XTSA1 SP000753494 BG3130H6327XTSA1TR BG 3130 H6327 |
| Package Body Material: | PLASTIC/EPOXY |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .025 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| No. of Terminals: | 6 |
| Minimum DS Breakdown Voltage: | 12 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | DUAL GATE, DEPLETION MODE |
| Additional Features: | LOW NOISE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Moisture Sensitivity Level (MSL): | 1 |









