Infineon Technologies - BGA425E6327

  1. Home
  2. Infineon Technologies - BGA425E6327
BGA425E6327 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BGA425E6327
Description NARROW BAND LOW POWER; Maximum Input Power (CW): -10 dBm; Maximum Operating Frequency: 1800 MHz; Maximum Operating Temperature: 150 Cel; Gain: 18.5 dB; Minimum Operating Temperature: -65 Cel;
Datasheet BGA425E6327 Datasheet
In Stock96
NAME DESCRIPTION
Construction: COMPONENT
Maximum Input Power (CW): -10 dBm
Minimum Operating Frequency: 100 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 150 Cel
Maximum Operating Frequency: 1800 MHz
RF or Microwave Device Type: NARROW BAND LOW POWER
Minimum Operating Temperature: -65 Cel
Gain: 18.5 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
96 - -

Popular Products

Category Top Products

MGA-61563-BLKG by Broadcom

MGA-61563-BLKG

Broadcom

Broadcom's MGA-61563-BLKG is a GAAS RF amplifier with 6.9dB gain, operating from 100MHz to 6GHz. It has a max input power of 18dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems. With a compact plastic/epoxy package and surface mounting feature, it offers high performance with 48mA supply current at 3/5V.
HMC608LC4TR by Hittite Microwave

HMC608LC4TR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;
SBF-4089Z by Qorvo

SBF-4089Z

Qorvo

Qorvo's SBF-4089Z is a GAAS RF amplifier with 13.2 dB gain, operating from 0 to 500 MHz. It has a max input power of 19 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wideband low-power applications, it features a surface-mount package with matte tin terminals.
HELA-10 by Mini-circuits

HELA-10

Mini-circuits

HELA-10 by Mini-circuits is a wideband medium power RF amplifier with 9.5 dB gain, operating from 50 MHz to 1000 MHz. It has a max input power of 20 dBm and VSWR of 1.22, making it suitable for various RF and microwave applications requiring high performance amplification in a compact surface-mount package.
MGA-87563-BLKG by Broadcom

MGA-87563-BLKG

Broadcom

Broadcom's MGA-87563-BLKG is a GAAS RF amplifier with 50 ohm impedance, operating from 500 MHz to 4 GHz. It has a CW input power of 13 dBm and VSWR of 1.8, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C. The component features a surface-mount package with matte tin terminals, making it ideal for various RF and microwave systems.
HMC506LP4ETR by Hittite Microwave

HMC506LP4ETR

Hittite Microwave

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
TGA2701-SM by Triquint Semiconductor

TGA2701-SM

Triquint Semiconductor

WIDE BAND HIGH POWER; Maximum Input Power (CW): 29 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8500 MHz; Gain: 18 dB; Minimum Operating Frequency: 5900 MHz;
935373852528 by NXP Semiconductors

935373852528

NXP Semiconductors

NXP Semiconductors' 935373852528 RF Amplifier operates in the 3200-4000 MHz range with a gain of 26.5 dB and can handle up to 28 dBm CW input power. This LDMOS component, with a VSWR of 10, is designed for narrowband high-power applications requiring a characteristic impedance of 50 ohms.
760 by Ms Kennedy

760

Ms Kennedy

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; Power Supplies (V): +-15;
ADL8106ACEZ by Analog Devices

ADL8106ACEZ

Analog Devices

WIDE BAND LOW POWER;
CMPA601C025F by Wolfspeed

CMPA601C025F

Wolfspeed

WIDE BAND HIGH POWER;
SKY65160-11 by Skyworks Solutions

SKY65160-11

Skyworks Solutions

RF/Microwave Amplifiers;
HMC717ALP3ETR by Analog Devices

HMC717ALP3ETR

Analog Devices

HMC717ALP3ETR by Analog Devices is a wide band low power RF amplifier with a gain of 11 dB. It operates at frequencies ranging from 4800 MHz to 6000 MHz and can handle a max input power of 20 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.
MMZ09312BT1 by Freescale Semiconductor

MMZ09312BT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
HMC463LP5E by Analog Devices

HMC463LP5E

Analog Devices

Analog Devices' HMC463LP5E is a wide band low power RF amplifier with 8 dB gain, operating from 2-20 GHz. It has a max input power of 23 dBm and operates on a 5V supply. Ideal for applications requiring high frequency amplification in RF & microwave systems.
HMC637ALP5ETR by Analog Devices

HMC637ALP5ETR

Analog Devices

Analog Devices' HMC637ALP5ETR is a wide band medium power RF amplifier with 12 dB gain and 25 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 0 to 6000 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
CMA-83LN+ by Mini-circuits

CMA-83LN+

Mini-circuits

CMA-83LN+ by Mini-circuits is a wide band low power RF amplifier with 18.5 dB gain, operating from 500 MHz to 8000 MHz. It has a max input power of 16 dBm and VSWR of 1.19, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.
HMC5879LS7 by Analog Devices

HMC5879LS7

Analog Devices

WIDE BAND HIGH POWER;
QPA2611TR7 by Qorvo

QPA2611TR7

Qorvo

Qorvo's QPA2611TR7 is a GAN technology RF amplifier with 35.5 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 3, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals, surface-mountable on plastic/epoxy package body.
TGA2227-SM by Qorvo

TGA2227-SM

Qorvo

Qorvo's TGA2227-SM is a wide band medium power RF amplifier with 15.7 dB gain, operating from 2-22 GHz. It can handle up to 40 dBm CW input power and operates b/w -40°C to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.