Infineon Technologies - BGA736L16

  1. Home
  2. Infineon Technologies - BGA736L16
BGA736L16 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BGA736L16
Description NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -30 Cel;
Datasheet BGA736L16 Datasheet
In Stock316
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 869 MHz
Sub-Category: RF/Microwave Amplifiers
Minimum Operating Temperature: -30 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 3
No. of Terminals: 16
Maximum Input Power (CW): 4 dBm
Package Equivalence Code: LCC16,.10SQ,20
Characteristic Impedance: 50 ohm
Additional Features: LOW NOISE
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 894 MHz
RF or Microwave Device Type: NARROW BAND LOW POWER
Gain: 3 dB
Power Supplies (V): 2.8
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
316 - -

Popular Products

Category Top Products

HMC3653LP3BETR by Analog Devices

HMC3653LP3BETR

Analog Devices

Analog Devices' HMC3653LP3BETR is a wide band low power RF amplifier with 12 terminals, operating from 7-15 GHz. It has a supply voltage of 5V and consumes up to 55mA current. Suitable for RF & microwave applications, it offers bipolar technology in a surface mount package.
QPA1019 by Qorvo

QPA1019

Qorvo

Qorvo's QPA1019 is a wide band high power RF amplifier with 30 dB gain, handling up to 28 dBm CW input power. Operating from 4.5 GHz to 7 GHz, it's ideal for applications requiring robust amplification in RF & microwave systems. With gold terminal finish and operating temperatures from -40°C to 85°C, it ensures reliable performance in various environments.
HMC635LC4 by Analog Devices

HMC635LC4

Analog Devices

Analog Devices' HMC635LC4 is a wide band low power RF amplifier with 15 dB gain, operating from 18-40 GHz. It features a max input power of 15 dBm and operates on a 5V supply. Ideal for applications requiring high frequency amplification in RF & microwave systems.
BGA231N7E6330XTSA1 by Infineon Technologies

BGA231N7E6330XTSA1

Infineon Technologies

Infineon's BGA231N7E6330XTSA1 is a RF amplifier with 16dB gain, operating from 1550-1615MHz. It has a max input power of 0dBm and operates in temperatures ranging from -40 to 85°C. Ideal for narrowband low-power applications requiring a component construction.
MW7IC2220NR1 by Freescale Semiconductor

MW7IC2220NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 2200 MHz; Characteristic Impedance: 50 ohm;
HMC478MP86TR by Analog Devices

HMC478MP86TR

Analog Devices

HMC478MP86TR by Analog Devices is a wide band low power RF amplifier with a max operating temperature of 85°C and a min operating temperature of -40°C. It has 1 function, operates on a 5V power supply, and is mounted using surface mount technology. This amplifier is commonly used in RF and microwave applications.
AG303-86G by Triquint Semiconductor

AG303-86G

Triquint Semiconductor

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 10 dBm;
TQP7M9102 by Triquint Semiconductor

TQP7M9102

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 400 MHz; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 27 dBm; Maximum Operating Frequency: 4000 MHz; Construction: COMPONENT;
MGA-87563-BLKG by Broadcom

MGA-87563-BLKG

Broadcom

Broadcom's MGA-87563-BLKG is a GAAS RF amplifier with 50 ohm impedance, operating from 500 MHz to 4 GHz. It has a CW input power of 13 dBm and VSWR of 1.8, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C. The component features a surface-mount package with matte tin terminals, making it ideal for various RF and microwave systems.
RA35H1516M by Mitsubishi Electric

RA35H1516M

Mitsubishi Electric

Mitsubishi Electric's RA35H1516M is a narrow band high power RF amplifier module with 20 dBm CW input power and VSWR of 3. Operating from -30°C to 110°C, it covers frequencies b/w 154-162 MHz. Ideal for applications requiring high-power amplification in the RF & microwave domain.
BGA420H6327XTSA1 by Infineon Technologies

BGA420H6327XTSA1

Infineon Technologies

Infineon's BGA420H6327XTSA1 is a wide band low power RF amplifier with 11dB gain, suitable for frequencies ranging from 100MHz to 1800MHz. With a max input power of 0dBm, it operates in temperatures from -65°C to 150°C. Ideal for applications requiring high frequency amplification in RF and microwave systems.
XTRF1208RPVR by Texas Instruments

XTRF1208RPVR

Texas Instruments

XTRF1208RPVR by Texas Instruments is a wide band low power RF amplifier with 16 dB gain. Operating from 10 MHz to 11 GHz, it features BICMOS technology and a characteristic impedance of 50 ohm. Ideal for applications requiring surface mount components in the RF & Microwave domain.
CMD318P3 by Qorvo

CMD318P3

Qorvo

WIDE BAND LOW POWER;
HMC637ALP5ETR by Analog Devices

HMC637ALP5ETR

Analog Devices

Analog Devices' HMC637ALP5ETR is a wide band medium power RF amplifier with 12 dB gain and 25 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 0 to 6000 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
TSS-53LNB3+ by Mini-circuits

TSS-53LNB3+

Mini-circuits

WIDE BAND LOW POWER;
AMMP-6220-TR1 by Broadcom

AMMP-6220-TR1

Broadcom

AMMP-6220-TR1 by Broadcom is a wide band low power RF amplifier with 22 dB gain, operating frequency range of 6-20 GHz. It features a max input power of 15 dBm and requires a 3V power supply. Ideal for applications requiring high-frequency amplification in RF and microwave systems.
LMV221SDX/NOPB by National Semiconductor

LMV221SDX/NOPB

National Semiconductor

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 85 Cel;
HMC499LC4 by Analog Devices

HMC499LC4

Analog Devices

HMC499LC4 by Analog Devices is a ceramic-packaged RF amplifier with a wide band medium power capability. It operates at frequencies ranging from 21 GHz to 32 GHz, providing a gain of 9 dB. This component is suitable for surface mount applications and can handle a max input power of 20 dBm.
CMD264P3 by Custom Mmic Design Services

CMD264P3

Custom Mmic Design Services

WIDE BAND LOW POWER; Maximum Operating Frequency: 18000 MHz; JESD-609 Code: e3; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Gain: 18 dB;
TGA2958-SM by Qorvo

TGA2958-SM

Qorvo

Qorvo's TGA2958-SM is a GAN technology RF amplifier with 25 dB gain, operating from 13-18 GHz. It has a max input power of 20 dBm and VSWR of 3, suitable for wideband high-power applications in RF & microwave systems. The component features surface mounting and requires -2.7 to 20V supply voltage at 70mA max current.