Infineon Technologies - BGA925L6

  1. Home
  2. Infineon Technologies - BGA925L6
BGA925L6 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BGA925L6
Description NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; Power Supplies (V): 1.8;
Datasheet BGA925L6 Datasheet
In Stock733
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 1550 MHz
Sub-Category: RF/Microwave Amplifiers
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
No. of Terminals: 6
Maximum Input Power (CW): 0 dBm
Package Equivalence Code: SOLCC6,.03,16
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 1615 MHz
RF or Microwave Device Type: NARROW BAND LOW POWER
Gain: 15.8 dB
Power Supplies (V): 1.8
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
733 $0.203 $148.799

Popular Products

Category Top Products

HMC636ST89ETR by Hittite Microwave

HMC636ST89ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 16 dBm;
760 by Ttm Technologies

760

Ttm Technologies

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; Maximum Operating Temperature: 125 Cel;
HMC462 by Hittite Microwave

HMC462

Hittite Microwave

WIDE BAND LOW POWER; Technology: GAAS; Gain: 12 dB; Package Equivalence Code: DIE OR CHIP; No. of Functions: 1; Power Supplies (V): 5;
HMC516LC5TR by Hittite Microwave

HMC516LC5TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
BGU8103X by NXP Semiconductors

BGU8103X

NXP Semiconductors

The NXP Semiconductors BGU8103X is a RF & Microwave Amplifier with 10 dBm CW input power, 1.78 max VSWR, and 14.5 dB gain. It operates b/w -40 to 85°C, has a characteristic impedance of 50 ohm, and is suitable for narrow band low power applications in the frequency range of 1559-1610 MHz.
MAAM-011112-TR0500 by M/a-com Technology Solutions

MAAM-011112-TR0500

M/a-com Technology Solutions

MAAM-011112-TR0500 by M/a-com Technology Solutions is a wide band low power RF amplifier with 21 dB gain. It operates b/w 20-37 GHz, suitable for various RF & microwave applications. With a max input power of 0 dBm and operating temperature range from -40 to 85°C, it offers reliable performance in diverse environments.
BGU6101,147 by NXP Semiconductors

BGU6101,147

NXP Semiconductors

The NXP Semiconductors BGU6101,147 is a wide band low power RF amplifier with 4dB gain. It operates b/w 40MHz to 4000MHz, suitable for various RF and microwave applications. With a max supply current of 10mA and operating temperature range from -40°C to 85°C, it is ideal for surface mount installations.
QPA1010D by Qorvo

QPA1010D

Qorvo

Qorvo's QPA1010D is a GAN RF amplifier with 30 dBm CW input power, 23.1 dB gain, and 50 ohm impedance. Ideal for wideband high-power applications from 7900 MHz to 11000 MHz, it features a VSWR of 3 and operates on -1.9V to 24V supplies.
QPA1019D by Qorvo

QPA1019D

Qorvo

Qorvo's QPA1019D is a GAN technology RF amplifier with 34.4 dB gain, 25 dBm CW input power, and 4 VSWR. Ideal for wideband high-power applications from 4500 MHz to 7000 MHz, it operates at temperatures ranging from -40°C to 85°C.
HMC797LP5ETR by Analog Devices

HMC797LP5ETR

Analog Devices

Analog Devices' HMC797LP5ETR is a GAAS technology RF amplifier with 32 terminals, operating b/w -55°C to 85°C. It has a power supply of 10V and max current of 440mA. Ideal for wide band medium power applications, it features a surface mount package body made of plastic/epoxy.
TQP7M9106 by Qorvo

TQP7M9106

Qorvo

Qorvo's TQP7M9106 is a wide band high power RF amplifier with 19 dB gain, operating from 50 MHz to 1500 MHz. It can handle up to 30 dBm CW input power and has a max VSWR of 10. Ideal for applications requiring high power amplification in RF & microwave systems.
SGA-3363Z by Sirenza Microdevices

SGA-3363Z

Sirenza Microdevices

SGA-3363Z by Sirenza Microdevices is a wide band low power RF amplifier with 15.5 dB gain, operating from 0 to 5500 MHz. It has a max input power of 18 dBm and operates on a 2.6V supply, making it suitable for various RF and microwave applications requiring high performance in plastic/epoxy package.
RA20H8994M-101 by Mitsubishi Electric

RA20H8994M-101

Mitsubishi Electric

Mitsubishi Electric's RA20H8994M-101 is a plastic/epoxy RF amplifier module with 20 dBm CW input power, VSWR of 3, and operating frequency range of 896-941 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 110°C with hybrid technology and characteristic impedance of 50 ohms.
TQP3M9018 by Triquint Semiconductor

TQP3M9018

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 50 MHz; Minimum Operating Temperature: -40 Cel;
SBB2089Z by Qorvo

SBB2089Z

Qorvo

The Qorvo SBB2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 24 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband low-power applications, this component features a surface-mount package with nickel palladium gold finish.
BGA427H6327XTSA1 by Infineon Technologies

BGA427H6327XTSA1

Infineon Technologies

BGA427H6327XTSA1 by Infineon Technologies is a RF amplifier with 18.5 dB gain, operating from 100 MHz to 1800 MHz. It has a max input power of -10 dBm and operates in temperatures ranging from -65°C to 150°C. This component is suitable for narrow band medium power applications.
BGA231N7E6330XTSA1 by Infineon Technologies

BGA231N7E6330XTSA1

Infineon Technologies

Infineon's BGA231N7E6330XTSA1 is a RF amplifier with 16dB gain, operating from 1550-1615MHz. It has a max input power of 0dBm and operates in temperatures ranging from -40 to 85°C. Ideal for narrowband low-power applications requiring a component construction.
RF3931 by Rf Micro Devices

RF3931

Rf Micro Devices

RF3931 by Rf Micro Devices is a ceramic module with a wide band high power RF or microwave device type. It has a max input power of 37 dBm and a gain of 15 dB. This amplifier operates within a frequency range of 0 MHz to 3000 MHz and is suitable for various RF and microwave applications.
CMD264 by Qorvo

CMD264

Qorvo

WIDE BAND LOW POWER;
ALM-32220-BLKG by Broadcom

ALM-32220-BLKG

Broadcom

ALM-32220-BLKG by Broadcom is a GAAS module with 13.5 dB gain, operating from 1700 to 2700 MHz. With a max input power of 28 dBm, it's ideal for wideband high-power RF applications requiring a 50 ohm impedance and 5V supply voltage.