Infineon Technologies - BPX38-3

  1. Home
  2. Infineon Technologies - BPX38-3
BPX38-3 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BPX38-3
Description Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000012 s; Peak Wavelength (nm): 870; Minimum Operating Temperature: -40 Cel;
Datasheet BPX38-3 Datasheet
In Stock107
NAME DESCRIPTION
Maximum Dark Current: 500 nA
Peak Wavelength (nm): 870
Maximum Power Dissipation: .33 W
Maximum Response Time: .000012 s
Maximum Operating Temperature: 85 Cel
Sub-Category: Photo Transistors
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -40 Cel
Mounting Feature: THROUGH HOLE MOUNT
Maximum On State Current: .05 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
107 - -

Popular Products

Category Top Products

TPS606-D by Toshiba

TPS606-D

Toshiba

PHOTO TRANSISTOR; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 20 V; Nominal Light Current: .04 mA; Additional Features: DOUBLE END; Configuration: SINGLE;
SFH309FA-4 by Infineon Technologies

SFH309FA-4

Infineon Technologies

SFH309FA-4 by Infineon Technologies is a phototransistor with a peak wavelength of 900nm. It can operate in temperatures ranging from -55°C to 100°C and has a max power dissipation of 0.165W. This through-hole mount device is commonly used in applications requiring fast response times and low dark current.
TPS626(C) by Toshiba

TPS626(C)

Toshiba

PHOTO DARLINGTON; Shape: ROUND; Size: 1.5 mm; No. of Functions: 1; Minimum Operating Temperature: -25 Cel; Additional Features: HIGH SENSITIVITY; SIDE VIEW;
TPS606-B by Toshiba

TPS606-B

Toshiba

PHOTO TRANSISTOR; Nominal Light Current: .01 mA; Configuration: SINGLE; Infrared (IR) Range: NO; No. of Functions: 1; Minimum Operating Temperature: -25 Cel;
SFH3410 by Infineon Technologies

SFH3410

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 3 nA; Maximum On State Current: .02 A; Peak Wavelength (nm): 570; Maximum Operating Temperature: 85 Cel;
QSD124A4R0 by Onsemi

QSD124A4R0

Onsemi

The Onsemi QSD124A4R0 is a 5mm phototransistor with peak wavelength of 880nm. It operates b/w -40°C to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring IR detection in through-hole mounting configurations.
TPS601A(A,F) by Toshiba

TPS601A(A,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 4.7 mm; No. of Functions: 1; Configuration: SINGLE; Maximum Power Dissipation: .15 W;
ASDL-6620-C22 by Broadcom

ASDL-6620-C22

Broadcom

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Size: 5 mm; Shape: ROUND;
SFH300FA by Siemens

SFH300FA

Siemens

PHOTO TRANSISTOR; Size: 5 mm; Configuration: SINGLE; No. of Functions: 1; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel;
KDT00030ATR by Fairchild Semiconductor

KDT00030ATR

Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Peak Wavelength (nm): 630; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3;
TPS616(F) by Toshiba

TPS616(F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Operating Temperature: -30 Cel; Size: 3.1 mm;
BPX38-5 by Infineon Technologies

BPX38-5

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A; Maximum Response Time: .000015 s;
BP103-6 by Infineon Technologies

BP103-6

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .1 A; Maximum Power Dissipation: .3 W;
QSD724 by Onsemi

QSD724

Onsemi

The Onsemi QSD724 is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W and response time of 0.00001s. Ideal for IR applications, it has a collector-emitter breakdown voltage of 30V and nominal light current of 3.5mA.
SFH320-Z by Osram Opto Semiconductors

SFH320-Z

Osram Opto Semiconductors

SFH320-Z by Osram Opto Semiconductors is a single phototransistor with peak wavelength of 980nm. It operates b/w -40 to 100°C, dissipating max power of 0.165W. Ideal for IR applications, it has a collector-emitter breakdown voltage of 35V and on-state current of 0.015A.
SFH3410-4 by Infineon Technologies

SFH3410-4

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 3 nA; Maximum On State Current: .02 A;
QSD124 by Fairchild Semiconductor

QSD124

Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .1 W; Shape: ROUND; JESD-609 Code: e3;
HLPT-B5G0-00000 by Broadcom

HLPT-B5G0-00000

Broadcom

PHOTO TRANSISTOR;
SFH300 by Infineon Technologies

SFH300

Infineon Technologies

Infineon's SFH300 phototransistor operates b/w -55°C to 100°C with peak wavelength of 850nm. It has a max power dissipation of 0.47W and response time of 0.00001s. Ideal for applications requiring through hole mounting, it can handle a max on state current of 0.05A.
TIL609 by Texas Instruments

TIL609

Texas Instruments

TIL609 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s and dark current of 25nA, it's ideal for applications requiring precise light detection in various environments.