Infineon Technologies - BPX38-4

  1. Home
  2. Infineon Technologies - BPX38-4
BPX38-4 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BPX38-4
Description Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 125 Cel; JESD-609 Code: e0; Maximum Dark Current: 500 nA;
Datasheet BPX38-4 Datasheet
In Stock995
NAME DESCRIPTION
Maximum Dark Current: 500 nA
Peak Wavelength (nm): 870
Maximum Power Dissipation: .33 W
Maximum Response Time: .000015 s
Maximum Operating Temperature: 125 Cel
Sub-Category: Photo Transistors
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -55 Cel
Mounting Feature: THROUGH HOLE MOUNT
Maximum On State Current: .05 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
995 $0.514 $511.430

Popular Products

Category Top Products

OP600B by Optotek

OP600B

Optotek

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Configuration: SINGLE; Shape: ROUND; Minimum Operating Temperature: -65 Cel; Minimum Collector-emitter Breakdown Voltage: 25 V;
OP800A by Tt Electronics Plc

OP800A

Tt Electronics Plc

OP800A by Tt Electronics Plc is a single phototransistor with peak wavelength of 890nm. It operates b/w -65°C to 125°C, with max power dissipation of 0.25W. Ideal for applications requiring optoelectronic sensing in the infrared range.
SFH309PFA3 by Infineon Technologies

SFH309PFA3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .015 A; Maximum Response Time: .000006 s; Minimum Operating Temperature: -55 Cel;
SDP8406-003 by Honeywell Sensing And Control

SDP8406-003

Honeywell Sensing And Control

SDP8406-003 by Honeywell is a single phototransistor with max temp of 85°C and min temp of -40°C. It has a nominal light current of 3.4mA, dark current of 100nA, and response time of 0.000015s. With a collector-emitter breakdown voltage of 30V, it is ideal for optoelectronic applications requiring precise light detection.
PH101 by Renesas Electronics

PH101

Renesas Electronics

PHOTO DARLINGTON; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 20 V; Additional Features: HIGH SENSITIVITY; Peak Wavelength (nm): 850;
BPX43 by Infineon Technologies

BPX43

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 300 nA; Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0;
TPS615(B,F) by Toshiba

TPS615(B,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Peak Wavelength (nm): 800; Minimum Collector-emitter Breakdown Voltage: 30 V; No. of Functions: 1;
TPS617-B by Toshiba

TPS617-B

Toshiba

PHOTO DARLINGTON; Maximum Dark Current: 250 nA; Additional Features: HIGH SENSITIVITY; SIDE VIEW; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 75 Cel; Nominal Light Current: 1.7 mA;
SMD2440-002 by Honeywell Sensing And Control

SMD2440-002

Honeywell Sensing And Control

SMD2440-002 by Honeywell Sensing And Control is a single configuration phototransistor with a peak wavelength of 880nm. It operates in temperatures ranging from -55 to 125 °C and has a max power dissipation of 0.125W. It is commonly used for optoelectronic applications requiring infrared range detection.
RPT-37PB3F by ROHM

RPT-37PB3F

ROHM

ROHM's RPT-37PB3F is a 3.1mm single phototransistor with peak wavelength of 800nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.15W and on-state current of 0.03A. Ideal for applications requiring IR detection in through-hole mounting setups.
TPS605(LB)-A by Toshiba

TPS605(LB)-A

Toshiba

PHOTO DARLINGTON; Shape: ROUND; Additional Features: HIGH SENSITIVITY; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 30 V; Nominal Light Current: .2 mA;
TPS616(AB,F) by Toshiba

TPS616(AB,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; No. of Functions: 1; Maximum Operating Temperature: 85 Cel; Maximum On State Current: .02 A;
L14N1 by Renesas Electronics

L14N1

Renesas Electronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .00001 s; Maximum Dark Current: 100 nA; Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A;
TPS605-B by Toshiba

TPS605-B

Toshiba

PHOTO DARLINGTON; Minimum Operating Temperature: 0 Cel; Infrared (IR) Range: NO; Size: 1.6 mm; Configuration: SINGLE; Additional Features: DOUBLE END; HIGH SENSITIVITY;
TPS601A(B,F) by Toshiba

TPS601A(B,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Infrared (IR) Range: YES; Peak Wavelength (nm): 800; Nominal Light Current: .2 mA; Maximum On State Current: .05 A;
QSE113E3R0 by Onsemi

QSE113E3R0

Onsemi

QSE113E3R0 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, has response time of 0.000008s, and collector-emitter breakdown voltage of 30V. Ideal for optoelectronic applications requiring fast and precise light detection in compact spaces.
1N5725 by Texas Instruments

1N5725

Texas Instruments

1N5725 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. Ideal for applications requiring fast response time and IR range detection in a through hole mount configuration.
TPS618-B by Toshiba

TPS618-B

Toshiba

PHOTO TRANSISTOR; No. of Functions: 1; Configuration: SINGLE; Additional Features: SIDE VIEW; Minimum Operating Temperature: -25 Cel; Size: 1.5 mm;
VTT9002H by Perkinelmer

VTT9002H

Perkinelmer

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .1 W; Maximum On State Current: .025 A; Maximum Operating Temperature: 70 Cel;
SFH320-3/4-Z by Osram Opto Semiconductors

SFH320-3/4-Z

Osram Opto Semiconductors

PHOTO TRANSISTOR;