BSB017N03LX3GXUMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSB017N03LX3GXUMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 147 A;
Datasheet	BSB017N03LX3GXUMA1 Datasheet
In Stock	824

NAME	DESCRIPTION
Package Body Material:	METAL
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	147 A
Maximum Pulsed Drain Current (IDM):	400 A
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	57 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-MBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0017 ohm
Avalanche Energy Rating (EAS):	225 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified

Pricing (USD)

Qty.	Unit Price	Ext. Price
824	-	-

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