Infineon Technologies - BSB029P03NX3G

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BSB029P03NX3G by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSB029P03NX3G
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 78 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 137 A;
Datasheet BSB029P03NX3G Datasheet
In Stock693
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 78 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 137 A
Maximum Drain Current (Abs) (ID): 137 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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Pricing (USD)

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