Infineon Technologies - BSC030N03MSGATMA1

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BSC030N03MSGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC030N03MSGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 400 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 8;
Datasheet BSC030N03MSGATMA1 Datasheet
In Stock6,984
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 21 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0038 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 75 mJ
Other Names: BSC030N03MSG+F30INCT-ND
BSC030N03MSG+F30INTR
BSC030N03MSG+F30INTR-ND
BSC030N03MSGATMA1DKR-NDTR-ND
BSC030N03MSGINTR-ND
BSC030N03MSG+F30INDKR
BSC030N03MSGATMA1CT
BSC030N03MSGINTR
BSC030N03MSG+F30
BSC030N03MSGINDKR-ND
BSC030N03MSGINCT-ND
BSC030N03MSGINDKR
BSC030N03MSG+F30INDKR-ND
BSC030N03MSG
BSC030N03MSGXT
BSC030N03MSGATMA1CT-NDTR-ND
SP000311506
BSC030N03MSG+F30INCT
BSC030N03MSGATMA1DKR
BSC030N03MSGATMA1TR
BSC030N03MSGINCT
BSC030N03MS G
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
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