Infineon Technologies - BSC042NE7NS3GATMA1

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BSC042NE7NS3GATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC042NE7NS3GATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Terminal Finish: TIN; Avalanche Energy Rating (EAS): 220 mJ;
Datasheet BSC042NE7NS3GATMA1 Datasheet
In Stock52,373
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 100 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 125 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0042 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 220 mJ
Other Names: BSC042NE7NS3 GTR-ND
BSC042NE7NS3G
2156-BSC042NE7NS3GATMA1
BSC042NE7NS3GATMA1DKR-NDTR-ND
BSC042NE7NS3GATMA1TR
BSC042NE7NS3 GCT-ND
BSC042NE7NS3 G-ND
SP000657440
BSC042NE7NS3 GDKR-ND
BSC042NE7NS3GATMA1DKR
BSC042NE7NS3 G
BSC042NE7NS3 GCT
BSC042NE7NS3 GDKR
BSC042NE7NS3GATMA1CT-NDTR-ND
BSC042NE7NS3 GTR
BSC042NE7NS3GATMA1CT
INFINFBSC042NE7NS3GATMA1
Maximum Feedback Capacitance (Crss): 40 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 75 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 100 A
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