BSC080P03LSGAUMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSC080P03LSGAUMA1
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Qualification: Not Qualified; Maximum Drain Current (ID): 16 A;
Datasheet	BSC080P03LSGAUMA1 Datasheet
In Stock	8,569

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	16 A
Maximum Pulsed Drain Current (IDM):	120 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.008 ohm
Moisture Sensitivity Level (MSL):	3
Avalanche Energy Rating (EAS):	248 mJ
Other Names:	BSC080P03LS GTR BSC080P03LS G-ND BSC080P03LSGAUMA1DKR BSC080P03LSGAUMA1CT BSC080P03LSG SP000359664 BSC080P03LS GCT-ND BSC080P03LS G BSC080P03LS GCT BSC080P03LS GDKR-ND BSC080P03LS GTR-ND BSC080P03LS GDKR BSC080P03LSGAUMA1TR
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Pricing (USD)

Qty.	Unit Price	Ext. Price
8,569	-	-

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