BSC0901NSIATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSC0901NSIATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
Datasheet	BSC0901NSIATMA1 Datasheet
In Stock	7,413

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	28 A
Maximum Pulsed Drain Current (IDM):	400 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0026 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	45 mJ
Other Names:	BSC0901NSI BSC0901NSICT BSC0901NSIATMA1DKR BSC0901NSIDKR BSC0901NSIATMA1TR BSC0901NSITR-ND BSC0901NSIATMA1CT SP000819818 BSC0901NSIDKR-ND BSC0901NSICT-ND BSC0901NSI-ND
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
7,413	-	-

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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;

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