BSC0993NDATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSC0993NDATMA1
Description	N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Elements: 2;
Datasheet	BSC0993NDATMA1 Datasheet
In Stock	6,247

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	14 mJ
Other Names:	BSC0993NDATMA1DKR BSC0993NDATMA1TR 2156-BSC0993NDATMA1 BSC0993NDATMA1CT BSC0993NDATMA1-ND SP001586390 IFEINFBSC0993NDATMA1
Package Body Material:	PLASTIC/EPOXY
Configuration:	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	17 A
Maximum Pulsed Drain Current (IDM):	68 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	8
Minimum DS Breakdown Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.007 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
6,247	-	-

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