Infineon Technologies - BSC123N10LSGATMA1

  1. Home
  2. Infineon Technologies - BSC123N10LSGATMA1
BSC123N10LSGATMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BSC123N10LSGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-F8; Maximum Pulsed Drain Current (IDM): 284 A; Terminal Finish: TIN;
Datasheet BSC123N10LSGATMA1 Datasheet
In Stock11,626
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10.6 A
Maximum Pulsed Drain Current (IDM): 284 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0123 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 155 mJ
Other Names: BSC123N10LS GTR-ND
BSC123N10LSGATMA1CT
BSC123N10LS GDKR
BSC123N10LS GDKR-ND
BSC123N10LS G
BSC123N10LS GTR
BSC123N10LS G-ND
BSC123N10LS GCT-ND
BSC123N10LS GCT
BSC123N10LSGATMA1DKR
BSC123N10LSGATMA1TR
SP000379612
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
11,626 - -

Popular Products

Category Top Products

IRF640STRRPBF by Vishay Intertechnology

IRF640STRRPBF

Vishay Intertechnology

Vishay Intertechnology's IRF640STRRPBF is a N-CHANNEL Power FET with 200V DS Breakdown Voltage. It has a max Drain Current of 18A and Pulsed Drain Current of 72A, suitable for SWITCHING applications. The transistor operates in ENHANCEMENT MODE, with a power dissipation of 130W in a SMALL OUTLINE package style.
IRFR9024NTRPBF by Infineon Technologies

IRFR9024NTRPBF

Infineon Technologies

IRFR9024NTRPBF by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 44A and EAS of 62mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in a small outline design.
IRLML0100TRPBF by International Rectifier

IRLML0100TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Package Style (Meter): SMALL OUTLINE; JEDEC-95 Code: TO-236AB;
ZXMP6A13GTA by Zetex Plc

ZXMP6A13GTA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 60 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF540NLPBF by International Rectifier

IRF540NLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Drain Current (ID): 33 A; Maximum Time At Peak Reflow Temperature (s): 30;
FQD7P20TM by Fairchild Semiconductor

FQD7P20TM

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Peak Reflow Temperature (C): 260; Transistor Application: SWITCHING;
IRFL9014TRPBF by International Rectifier

IRFL9014TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
2N7002 by Philips Semiconductors

2N7002

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
IRLML2502GTRPBF by International Rectifier

IRLML2502GTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Terminal Position: DUAL; Maximum Pulsed Drain Current (IDM): 33 A;
DMP3098L-7 by Diodes Incorporated

DMP3098L-7

Diodes Incorporated

DMP3098L-7 by Diodes Inc. is a P-channel power FET with a min DS breakdown voltage of 30V and max pulsed drain current of 11A. It is used for switching applications and operates in enhancement mode.
2N7000 by Philips Semiconductors

2N7000

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Matte Tin (Sn);
IRFZ44NSTRR by International Rectifier

IRFZ44NSTRR

International Rectifier

IRFZ44NSTRR by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 160A IDM. Ideal for SWITCHING applications, it features 0.0175 ohm Drain-Source On Resistance and 94W Max Power Dissipation in a SMALL OUTLINE package.
BSZ15DC02KDHXTMA1 by Infineon Technologies

BSZ15DC02KDHXTMA1

Infineon Technologies

Infineon BSZ15DC02KDHXTMA1 is a Power FET with N/P-Channel, 20V DS Breakdown Voltage, and 0.055 ohm RDS(ON). Commonly used in automotive applications due to AEC-Q101 standard compliance.
AUIRFZ44N by Infineon Technologies

AUIRFZ44N

Infineon Technologies

AUIRFZ44N by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 55V and can handle a max pulsed drain current of 160A. This transistor is commonly used for switching applications.
IRF1010NSTRLPBF by Infineon Technologies

IRF1010NSTRLPBF

Infineon Technologies

IRF1010NSTRLPBF by Infineon Technologies is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 290A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.011 ohm Drain-Source On Resistance and can handle up to 170W power dissipation.
G3R75MT12K by Genesic Semiconductor

G3R75MT12K

Genesic Semiconductor

Power Field-Effect Transistors;
FDD4685-F085P by Onsemi

FDD4685-F085P

Onsemi

FDD4685-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 32A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an Avalanche Energy Rating of 121mJ.
ZXMP6A17GTA by Zetex Plc

ZXMP6A17GTA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.9 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 60 V;
IRFH4251DTRPBF by Infineon Technologies

IRFH4251DTRPBF

Infineon Technologies

IRFH4251DTRPBF by Infineon Technologies is a N-CHANNEL Power FET with 25V DS Breakdown Voltage. It features SERIES CONNECTED, CENTER TAP configuration and 120A Max Pulsed Drain Current. Ideal for SWITCHING applications, this transistor has a 0.0046 ohm Max Drain-Source On Resistance and operates in ENHANCEMENT MODE up to 150°C.
FDMS86163P by Fairchild Semiconductor

FDMS86163P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 100 V;