Infineon Technologies - BSC360N15NS3GATMA1

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BSC360N15NS3GATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC360N15NS3GATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 74 W; Terminal Finish: TIN; Package Body Material: PLASTIC/EPOXY;
Datasheet BSC360N15NS3GATMA1 Datasheet
In Stock53,040
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 33 A
Maximum Pulsed Drain Current (IDM): 132 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 74 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .036 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 80 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 150 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 33 A
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