Infineon Technologies - BSC883N03MSG

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BSC883N03MSG by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC883N03MSG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): 19 A;
Datasheet BSC883N03MSG Datasheet
In Stock760
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 19 A
Maximum Pulsed Drain Current (IDM): 392 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 57 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0046 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 40 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 34 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 98 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
760 $0.361 $274.360

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