Infineon Technologies - BSD235NH6327XTSA1

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BSD235NH6327XTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSD235NH6327XTSA1
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; JESD-609 Code: e3; Reference Standard: AEC-Q101;
Datasheet BSD235NH6327XTSA1 Datasheet
In Stock65,672
NAME DESCRIPTION
Other Names: BSD235N H6327CT-ND
BSD235N H6327CT
BSD235NH6327XTSA1DKR
BSD235N H6327TR-ND
BSD235N H6327DKR-ND
SP000917652
BSD235N H6327DKR
BSD235NH6327XTSA1CT
BSD235NH6327XTSA1TR
BSD235N H6327-ND
BSD235N H6327
BSD235NH6327
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .95 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Maximum Drain-Source On Resistance: .35 ohm
Moisture Sensitivity Level (MSL): 1
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