Infineon Technologies - BSD314SPE

BSD314SPE by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSD314SPE
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain-Source On Resistance: .14 ohm; Peak Reflow Temperature (C): 260;
Datasheet BSD314SPE Datasheet
In Stock859
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .0015 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .14 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 11 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: ESD PROTECTION, LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 1.5 A
Peak Reflow Temperature (C): 260
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