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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | BSD316SNL6327HTSA1 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Additional Features: AVALANCHE RATED; Minimum Operating Temperature: -55 Cel; |
Datasheet | BSD316SNL6327HTSA1 Datasheet |
In Stock | 390 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Feedback Capacitance (Crss): | 7 pF |
Maximum Drain Current (ID): | 1.4 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Minimum Operating Temperature: | -55 Cel |
No. of Terminals: | 6 |
Minimum DS Breakdown Voltage: | 30 V |
Maximum Power Dissipation (Abs): | .5 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G6 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | AVALANCHE RATED |
Maximum Operating Temperature: | 150 Cel |
Reference Standard: | AEC-Q101 |
Maximum Power Dissipation Ambient: | .5 W |
Maximum Drain-Source On Resistance: | .0016 ohm |