Infineon Technologies - BSD316SNL6327HTSA1

BSD316SNL6327HTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSD316SNL6327HTSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Additional Features: AVALANCHE RATED; Minimum Operating Temperature: -55 Cel;
Datasheet BSD316SNL6327HTSA1 Datasheet
In Stock390
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 7 pF
Maximum Drain Current (ID): 1.4 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 6
Minimum DS Breakdown Voltage: 30 V
Maximum Power Dissipation (Abs): .5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Maximum Operating Temperature: 150 Cel
Reference Standard: AEC-Q101
Maximum Power Dissipation Ambient: .5 W
Maximum Drain-Source On Resistance: .0016 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
390 $0.220 $85.800

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