Infineon Technologies - BSD840NH6327XTSA1

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BSD840NH6327XTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSD840NH6327XTSA1
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .4 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE;
Datasheet BSD840NH6327XTSA1 Datasheet
In Stock282,142
NAME DESCRIPTION
Other Names: BSD840N H6327CT
BSD840NH6327
BSD840N H6327TR-ND
BSD840N H6327CT-ND
BSD840NH6327XTSA1DKR
BSD840NH6327XTSA1CT
BSD840N H6327DKR
SP000917654
BSD840N H6327-ND
BSD840NH6327XT
BSD840N H6327DKR-ND
BSD840N H6327
BSD840NH6327XTSA1TR
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 3.5 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance: .4 ohm
Moisture Sensitivity Level (MSL): 1
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