BSF030NE2LQXUMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSF030NE2LQXUMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 28 W; No. of Terminals: 2; JESD-30 Code: R-MBCC-N2;
Datasheet	BSF030NE2LQXUMA1 Datasheet
In Stock	169

NAME	DESCRIPTION
Package Body Material:	METAL
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	75 A
Maximum Pulsed Drain Current (IDM):	300 A
Surface Mount:	YES
Terminal Finish:	SILVER NICKEL
No. of Terminals:	2
Maximum Power Dissipation (Abs):	28 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-MBCC-N2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0041 ohm
Moisture Sensitivity Level (MSL):	3
Avalanche Energy Rating (EAS):	50 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e4
Minimum Operating Temperature:	-40 Cel
Minimum DS Breakdown Voltage:	25 V
Qualification:	Not Qualified

Pricing (USD)

Qty.	Unit Price	Ext. Price
169	-	-

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;