Infineon Technologies - BSF450NE7NH3

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BSF450NE7NH3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSF450NE7NH3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 3;
Datasheet BSF450NE7NH3 Datasheet
In Stock490
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 15 A
Maximum Pulsed Drain Current (IDM): 60 A
Surface Mount: YES
Terminal Finish: SILVER NICKEL
No. of Terminals: 2
Maximum Power Dissipation (Abs): 18 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .045 ohm
Moisture Sensitivity Level (MSL): 3
Avalanche Energy Rating (EAS): 17 mJ
Maximum Feedback Capacitance (Crss): 22 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 75 V
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Pricing (USD)

Qty. Unit Price Ext. Price
490 $0.360 $176.400

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