Infineon Technologies - BSG0813NDIATMA1

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BSG0813NDIATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSG0813NDIATMA1
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; No. of Elements: 2;
Datasheet BSG0813NDIATMA1 Datasheet
In Stock614
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 30 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 19 A
Maximum Pulsed Drain Current (IDM): 160 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
No. of Terminals: 7
Minimum DS Breakdown Voltage: 25 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: SOURCE
Maximum Drain-Source On Resistance: .004 ohm
Moisture Sensitivity Level (MSL): 1
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