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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSL214NL6327HTSA1 |
| Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED; Package Body Material: PLASTIC/EPOXY; |
| Datasheet | BSL214NL6327HTSA1 Datasheet |
| In Stock | 1,812 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
BSL214N L6327DKR-ND 2156-BSL214NL6327HTSA1-ITTR BSL214NL6327HTSA1TR BSL214NL6327HTSA1DKR BSL214NL6327 BSL214N L6327TR BSL214N L6327CT-ND BSL214NL6327HTSA1CT BSL214N L6327TR-ND SP000442430 IFEINFBSL214NL6327HTSA1 BSL214N L6327DKR BSL214N L6327CT BSL214N L6327-ND BSL214N L6327 |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Feedback Capacitance (Crss): | 9 pF |
| Maximum Drain Current (ID): | 1.5 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 6 |
| Minimum DS Breakdown Voltage: | 20 V |
| Qualification: | Not Qualified |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Additional Features: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Maximum Operating Temperature: | 150 Cel |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | .14 ohm |









