Infineon Technologies - BSL302SNH6327XTSA1

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BSL302SNH6327XTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSL302SNH6327XTSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Moisture Sensitivity Level (MSL): 1;
Datasheet BSL302SNH6327XTSA1 Datasheet
In Stock63
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 30 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 7.1 A
Maximum Pulsed Drain Current (IDM): 28 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 6
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance: .025 ohm
Moisture Sensitivity Level (MSL): 1
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