Infineon Technologies - BSL302SNL6327HTSA1

  1. Home
  2. Infineon Technologies - BSL302SNL6327HTSA1
BSL302SNL6327HTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BSL302SNL6327HTSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .025 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BSL302SNL6327HTSA1 Datasheet
In Stock960
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 43 pF
Maximum Drain Current (ID): 7.1 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .025 ohm
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
960 - -

Popular Products

Category Top Products

BSS84 by Siemens

BSS84

Siemens

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain-Source On Resistance: 10 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
MMBF170LT3 by Motorola

MMBF170LT3

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; No. of Terminals: 3; Maximum Operating Temperature: 150 Cel;
FDG6303N by Onsemi

FDG6303N

Onsemi

FDG6303N by Onsemi is a N-CHANNEL FET with 2 elements, built-in diode, and 0.45 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with max ID of 0.5A and 25V DS breakdown voltage. This small outline transistor has a max temp of 150°C and -55°C min temp.
FDC6327C by Onsemi

FDC6327C

Onsemi

FDC6327C by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It has a max drain current of 2.7A, on-resistance of 0.08 ohm, and operates in enhancement mode for switching applications. The package is SMD, with 6 terminals in Gull Wing form, rated up to 150°C.
2N7002KW by Micro Commercial Components

2N7002KW

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e3; Qualification: Not Qualified;
BSS138NE7854 by Infineon Technologies

BSS138NE7854

Infineon Technologies

BSS138NE7854 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.23A ID. It is used in small outline packages for applications requiring low power dissipation, such as MIL-STD-883 compliant circuits.
2N7002 by Micro Commercial Components

2N7002

Micro Commercial Components

Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .34 A; Package Style (Meter): SMALL OUTLINE;
BSS123 by Siemens

BSS123

Siemens

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: R-PDSO-G3; Transistor Element Material: SILICON;
BSS84AKMB,315 by Nexperia

BSS84AKMB,315

Nexperia

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Package Style (Meter): CHIP CARRIER; JESD-30 Code: R-PBCC-N3;
MMBF170LT1 by Motorola

MMBF170LT1

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE;
DMN6075S-7 by Diodes Incorporated

DMN6075S-7

Diodes Incorporated

DMN6075S-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 2A ID, and 0.085 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.15W. Its small outline package makes it suitable for surface mount designs at temperatures ranging from -55 to 150°C.
2N7002BKM,315 by Nexperia

2N7002BKM,315

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PBCC-N3; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): 30;
2N7000-G by Microchip Technology

2N7000-G

Microchip Technology

2N7000-G by Microchip is a N-CHANNEL FET with 60V DS breakdown voltage and 0.2A max drain current. Ideal for switching applications, it operates in enhancement mode with 5 ohm RDS(on) and 5pF Crss.
2N7002KW by Secos

2N7002KW

Secos

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Maximum Feedback Capacitance (Crss): 5 pF; Transistor Application: SWITCHING;
IRF7820TRPBF by International Rectifier

IRF7820TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;
2N7002LT1 by Micro Commercial Components

2N7002LT1

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL; No. of Elements: 1;
2N7002K by Diodes Incorporated

2N7002K

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .3 A; Maximum Feedback Capacitance (Crss): 5 pF; Terminal Form: GULL WING;
ZVN3310FTA by Zetex Plc

ZVN3310FTA

Zetex Plc

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
2N7002T-7-F by Diodes Incorporated

2N7002T-7-F

Diodes Incorporated

2N7002T-7-F by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode and enhancement mode operation. Package style is small outline, making it suitable for surface mount designs in various electronic devices.
FDC5612_NL by Fairchild Semiconductor

FDC5612_NL

Fairchild Semiconductor

FDC5612_NL by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS breakdown voltage and 4.3A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.6W. This small outline transistor with GULL WING terminals is designed for surface mount applications at temperatures up to 150°C.