Infineon Technologies - BSL308PEH6327XTSA1

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BSL308PEH6327XTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSL308PEH6327XTSA1
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 2 A;
Datasheet BSL308PEH6327XTSA1 Datasheet
In Stock11,413
NAME DESCRIPTION
Other Names: BSL308PEH6327XTSA1-ND
BSL308PEH6327XTSA1TR
SP001101004
BSL308PEH6327XTSA1CT
BSL308PEH6327XTSA1DKR
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 18 pF
Maximum Drain Current (ID): 2 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
No. of Terminals: 6
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Reference Standard: AEC-Q101
Maximum Drain-Source On Resistance: .08 ohm
Moisture Sensitivity Level (MSL): 1
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