BSL606SNH6327TR by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSL606SNH6327TR
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; No. of Terminals: 6;
Datasheet	BSL606SNH6327TR Datasheet
In Stock	1,559

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	14 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	4.5 A
Maximum Pulsed Drain Current (IDM):	18.1 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	6
Minimum DS Breakdown Voltage:	60 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Reference Standard:	AEC-Q101
Maximum Drain-Source On Resistance:	.06 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,559	-	-

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