Infineon Technologies - BSM111

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BSM111 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM111
Description Power Field-Effect Transistors; Maximum Power Dissipation (Abs): 700 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 200 A; Maximum Drain Current (ID): 200 A; No. of Elements: 1;
Datasheet BSM111 Datasheet
In Stock364
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 700 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 200 A
Maximum Drain Current (Abs) (ID): 200 A
Sub-Category: FET General Purpose Power
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