Infineon Technologies - BSM200GAL120DN2

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BSM200GAL120DN2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM200GAL120DN2
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 1400 W; Maximum Collector Current (IC): 290 A; Maximum VCEsat: 3 V; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet BSM200GAL120DN2 Datasheet
In Stock806
NAME DESCRIPTION
Maximum Collector Current (IC): 290 A
Maximum Power Dissipation (Abs): 1400 W
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3 V
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