Infineon Technologies - BSM25GD120DN2E3224BOSA1

FGH40N60UFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 290W Ptot. Ideal for power control applications due to its fast tf of 100ns and toff of 190ns. The package style is flange mount with a max operating temperature of 150°C.

APT85GR120J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 543W. It is designed for motor control applications, featuring a nominal turn-off time of 445ns and a built-in diode in a rectangular package style.

FGPF10N60UNDF by Onsemi is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 20A max collector current, and 42W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast switching times of 15.4ns turn on and 24.8ns fall time.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; No. of Elements: 4;

CM200DY-12NF by Mitsubishi Electric is an N-CHANNEL IGBT with 2 elements and a built-in diode. It has a max VCEsat of 2.2V and can handle a max collector current (IC) of 200A. This IGBT is commonly used for power control applications.

FS400R07A1E3 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max collector current (IC) of 500A. It is used for power control applications and has a package style of FLANGE MOUNT.

Infineon FS400R07A1E3_H5 IGBT, N-CHANNEL, 650V VCEsat, 500A IC, for POWER CONTROL apps. Features 750W Pdiss, -40 to 150°C temp range, with ton of 200ns and toff of 580ns.

AUIRG4BC30USTRL by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 23A. It has a nominal turn-off time of 320ns, making it ideal for power control applications requiring fast switching speeds and high voltage handling capabilities. The package style is small outline with gull wing terminals, suitable for surface mount configurations in various electronic devices.

SGP10N60RUFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 16A IC, and 75W Pd. Ideal for MOTOR CONTROL applications due to its single configuration with built-in diode. Features fast switching times: ton of 49ns and tf of 220ns.

Infineon's IGA03N120H2XKSA1 is an N-Channel IGBT with 1200V VCE, 310ns toff, and 14.4ns ton. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.

NXH50C120L2C2ES1G by Onsemi is an IGBT transistor with 6 elements in a bridge configuration. It has a max VCEsat of 2.4V and can handle up to 50A of collector current. Ideal for power control applications, it operates b/w -40°C to 150°C temperature range.

STGF20NB60S by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 24A max collector current, and 40W max power dissipation. Ideal for motor control applications due to its single configuration and fast turn-on time of 162ns.

FGL60N100BNTDTU by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1000V and a Max Collector Current of 60A. It has a Nominal Turn Off Time of 760ns and Nominal Turn On Time of 460ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material and THROUGH-HOLE terminals.

Infineon's FD300R12KE3HOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 480A max collector current, and 830ns turn off time. It is a single configuration with built-in diode, suitable for high-power applications like industrial motor drives and renewable energy systems.

DF150R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V. It has a turn on time of 185ns and turn off time of 490ns, making it ideal for power control applications. The transistor comes in a rectangular package style with flange mount and operates at temperatures up to 175°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;

FP35R12KT4B15BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max power dissipation of 210W. It is commonly used for power control applications due to its high voltage rating (1200V) and fast turn on/off times (210ns/620ns).

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 84 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

Infineon's FP10R12W1T4PB11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 20A max collector current, and 500ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.

Infineon FS150R12KT4P_B11 IGBT, N-Channel type, with VCEsat of 2.1V and Pmax of 750W. Ideal for high-power applications requiring fast switching such as motor drives and renewable energy systems due to its low turn-off time of 605ns. Operating temperature range from -40°C to 150°C ensures reliability in various environments.