Infineon Technologies - BSM25GP120_B2

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BSM25GP120_B2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM25GP120_B2
Description N-Channel; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 45 A; Case Connection: ISOLATED; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet BSM25GP120_B2 Datasheet
In Stock45
NAME DESCRIPTION
Nominal Turn Off Time (toff): 420 ns
Maximum Collector Current (IC): 45 A
Maximum Power Dissipation (Abs): 230 W
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 90 ns
Transistor Element Material: SILICON
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
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