Infineon Technologies - BSM282F

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BSM282F by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM282F
Description Power Field-Effect Transistors; Maximum Power Dissipation (Abs): 225 W; Maximum Drain Current (ID): 11 A; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 11 A;
Datasheet BSM282F Datasheet
In Stock994
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 225 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Drain Current (ID): 11 A
Maximum Drain Current (Abs) (ID): 11 A
Sub-Category: FET General Purpose Power
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