Infineon Technologies - BSM50GB160D

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BSM50GB160D by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM50GB160D
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 70 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 1600 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet BSM50GB160D Datasheet
In Stock389
NAME DESCRIPTION
Maximum Collector Current (IC): 70 A
Maximum Power Dissipation (Abs): 500 W
Maximum Collector-Emitter Voltage: 1600 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
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