Infineon Technologies - BSM50GD60DN2

  1. Home
  2. Infineon Technologies - BSM50GD60DN2
BSM50GD60DN2 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BSM50GD60DN2
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 50 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel;
Datasheet BSM50GD60DN2 Datasheet
In Stock830
NAME DESCRIPTION
Maximum Collector Current (IC): 50 A
Maximum Power Dissipation (Abs): 200 W
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.7 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
830 - -

Popular Products

Category Top Products

FGA25N120ANTDTU-F109 by Onsemi

FGA25N120ANTDTU-F109

Onsemi

FGA25N120ANTDTU-F109 by Onsemi is an N-CHANNEL IGBT with 90 ns rise time, 180 ns fall time, and 312 W power dissipation. Ideal for high-power applications requiring a max collector-emitter voltage of 1200 V and a collector current of 50 A. Operating temperature up to 150°C makes it suitable for industrial use.
IRG4BC40WLPBF by International Rectifier

IRG4BC40WLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 40 A; Maximum Fall Time (tf): 110 ns;
APT75GP120J by Advanced Power Technology

APT75GP120J

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 128 A; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): NOT SPECIFIED;
IXXX160N65B4 by IXYS Corporation

IXXX160N65B4

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 310 A; Transistor Element Material: SILICON;
IRG4PC50FDPBF by Infineon Technologies

IRG4PC50FDPBF

Infineon Technologies

IRG4PC50FDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 200W. It has a single configuration with built-in diode, suitable for power control applications. With a nominal turn-off time of 660ns and max fall time of 210ns, it offers efficient switching performance in high-power systems.
2ED300C17SROHSBPSA1 by Infineon Technologies

2ED300C17SROHSBPSA1

Infineon Technologies

N-Channel; Transistor Element Material: SILICON; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -25 Cel; Moisture Sensitivity Level (MSL): 1;
FGD5T120SH by Onsemi

FGD5T120SH

Onsemi

FGD5T120SH by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 3.6V and a collector-emitter voltage of 1200V. Ideal for general purpose switching applications, it has a turn-off time of 159.6ns and can handle a max collector current of 10A.
IRG4PC30UDPBF by International Rectifier

IRG4PC30UDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Nominal Turn Off Time (toff): 300 ns;
IKY75N120CH3XKSA1 by Infineon Technologies

IKY75N120CH3XKSA1

Infineon Technologies

IKY75N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 150A max collector current. Ideal for power control applications, it has a single configuration with built-in diode and offers fast turn-off time of 468ns.
FP25R12W2T4B11BOMA1 by Infineon Technologies

FP25R12W2T4B11BOMA1

Infineon Technologies

FP25R12W2T4B11BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 39A max collector current. It has a complex configuration, 7 elements, and is used for power control applications. With a nominal turn-off time of 520ns and turn-on time of 47ns, it features a rectangular package style with flange mount.
FP15R12W1T4B3BOMA1 by Infineon Technologies

FP15R12W1T4B3BOMA1

Infineon Technologies

Infineon Technologies' FP15R12W1T4B3BOMA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and nominal turn off time of 495ns. Ideal for power control applications, this UL approved transistor features a rectangular package style with flange mount.
IKD06N60RAATMA2 by Infineon Technologies

IKD06N60RAATMA2

Infineon Technologies

IKD06N60RAATMA2 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, making it suitable for applications requiring fast switching such as motor drives and power supplies. AEC-Q101 certified, it comes in a small outline package with gull wing terminals for surface mount assembly.
HGTG10N120BND by Fairchild Semiconductor

HGTG10N120BND

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 35 A; JESD-609 Code: e3;
FS400R07A1E3_H5 by Infineon Technologies

FS400R07A1E3_H5

Infineon Technologies

Infineon FS400R07A1E3_H5 IGBT, N-CHANNEL, 650V VCEsat, 500A IC, for POWER CONTROL apps. Features 750W Pdiss, -40 to 150°C temp range, with ton of 200ns and toff of 580ns.
IGW50N60TPXKSA1 by Infineon Technologies

IGW50N60TPXKSA1

Infineon Technologies

IGW50N60TPXKSA1 by Infineon is an N-CHANNEL IGBT with a max voltage of 600V and max current of 100A. It has a turn-off time of 396ns and turn-on time of 60ns, ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations at temperatures up to 175°C.
SGD02N120BUMA1 by Infineon Technologies

SGD02N120BUMA1

Infineon Technologies

Infineon's SGD02N120BUMA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 6.2A max collector current. Ideal for power control applications, it has a turn-off time of 375ns and turn-on time of 40ns. This surface-mount transistor in a rectangular package is designed for high-power operations up to 150°C.
APT50GP60JDQ2 by Microsemi

APT50GP60JDQ2

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 329 W; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V;
IRGP50B60PDPBF by Infineon Technologies

IRGP50B60PDPBF

Infineon Technologies

IRGP50B60PDPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 370W power dissipation, and 75A max collector current. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package shape. Operating at up to 150°C, it offers fast rise time of 36ns and fall time of 65ns.
IRG4BC30FD1PBF by Infineon Technologies

IRG4BC30FD1PBF

Infineon Technologies

IRG4BC30FD1PBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 31A max collector current. It has a 740ns turn off time, ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and can handle up to 100W of power dissipation at a max operating temperature of 150°C.
FF600R12ME4PB11BOSA1 by Infineon Technologies

FF600R12ME4PB11BOSA1

Infineon Technologies

Infineon's FF600R12ME4PB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, featuring VCEsat of 2.1V and toff of 770ns. Ideal for POWER CONTROL applications, it operates up to 1200V at temperatures from -40°C to 150°C.