Infineon Technologies - BSM681F

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BSM681F by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM681F
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Application: SWITCHING; Package Style (Meter): FLANGE MOUNT;
Datasheet BSM681F Datasheet
In Stock434
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.3 A
Maximum Pulsed Drain Current (IDM): 21 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 17
Minimum DS Breakdown Voltage: 800 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 125 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-D17
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: SOLDER LUG
Operating Mode: ENHANCEMENT MODE
Maximum Drain Current (Abs) (ID): 5.3 A
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: 1.9 ohm
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