Infineon Technologies - BSM682F

BSM682F by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM682F
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 225 W; Maximum Pulsed Drain Current (IDM): 40 A; Minimum DS Breakdown Voltage: 800 V;
Datasheet BSM682F Datasheet
In Stock957
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10 A
Maximum Pulsed Drain Current (IDM): 40 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 17
Maximum Power Dissipation (Abs): 225 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-D17
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: SOLDER LUG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .95 ohm
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 800 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 10 A
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