BSM75GB170DN2HOSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSM75GB170DN2HOSA1
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 110 A; JESD-30 Code: R-XUFM-X7; Nominal Turn On Time (ton): 550 ns;
Datasheet	BSM75GB170DN2HOSA1 Datasheet
In Stock	479

NAME	DESCRIPTION
Other Names:	INFINFBSM75GB170DN2HOSA1 2156-BSM75GB170DN2HOSA1 SP000100464
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	110 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Nominal Turn Off Time (toff):	740 ns
No. of Terminals:	7
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1700 V
Terminal Position:	UPPER
Nominal Turn On Time (ton):	550 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X7
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
479	$97.230	$46,573.170

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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