Infineon Technologies - BSO083N03MSGXUMA1

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BSO083N03MSGXUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSO083N03MSGXUMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
Datasheet BSO083N03MSGXUMA1 Datasheet
In Stock476
NAME DESCRIPTION
Other Names: SP000446064
BSO083N03MSGXUMA1CT
BSO083N03MS GINDKR-ND
BSO083N03MS GINCT
BSO083N03MS GINTR-ND
BSO083N03MSGXUMA1DKR
BSO083N03MS GINCT-ND
BSO083N03MS G-ND
BSO083N03MSG
BSO083N03MSGXUMA1TR
BSO083N03MS GINDKR
BSO083N03MS GINTR
BSO083N03MS G
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9.8 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .0083 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
476 $0.167 $79.492

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