Infineon Technologies - BSO203PHXUMA1

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BSO203PHXUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSO203PHXUMA1
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Finish: TIN; Additional Features: LOGIC LEVEL COMPATIBLE;
Datasheet BSO203PHXUMA1 Datasheet
In Stock820
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 5.7 A
Maximum Pulsed Drain Current (IDM): 32.8 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .021 ohm
Moisture Sensitivity Level (MSL): 3
Avalanche Energy Rating (EAS): 97 mJ
Other Names: BSO203P H
BSO203PHXUMA1CT
2156-BSO203PHXUMA1-448
BSO203PHXUMA1TR
BSO203P HDKR-ND
BSO203P HTR-ND
BSO203P HDKR
BSO203PH
SP000613858
BSO203P HCT-ND
BSO203P H-ND
BSO203P HCT
BSO203PHXUMA1DKR
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
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Pricing (USD)

Qty. Unit Price Ext. Price
820 $0.639 $523.980

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