Infineon Technologies - BSO203SPHXUMA1

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BSO203SPHXUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSO203SPHXUMA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Shape: RECTANGULAR; No. of Terminals: 8;
Datasheet BSO203SPHXUMA1 Datasheet
In Stock7,023
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 5.7 A
Maximum Pulsed Drain Current (IDM): 35.6 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .021 ohm
Moisture Sensitivity Level (MSL): 3
Avalanche Energy Rating (EAS): 97 mJ
Other Names: BSO203SPHXUMA1-ND
BSO203SP HCT
BSO203SPHXUMA1CT
BSO203SP HDKR
IFEINFBSO203SPHXUMA1
2156-BSO203SPHXUMA1
BSO203SPHXUMA1DKR
BSO203SP H
BSO203SP H-ND
BSO203SP HCT-ND
BSO203SPHXUMA1TR
BSO203SPH
SP000613856
BSO203SP HDKR-ND
BSO203SP HTR-ND
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
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