Infineon Technologies - BSO207PHXT

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BSO207PHXT by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSO207PHXT
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .045 ohm; Maximum Drain Current (ID): 5 A; Terminal Form: GULL WING;
Datasheet BSO207PHXT Datasheet
In Stock817
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 44 mJ
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 5 A
Maximum Pulsed Drain Current (IDM): 22.8 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .045 ohm
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