Infineon Technologies - BSO612CVG

  1. Home
  2. Infineon Technologies - BSO612CVG
BSO612CVG by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BSO612CVG
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .12 ohm; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 260;
Datasheet BSO612CVG Datasheet
In Stock202
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 47 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 3 A
Maximum Pulsed Drain Current (IDM): 12 A
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .12 ohm
Moisture Sensitivity Level (MSL): 3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
202 - -

Popular Products

Category Top Products

ZXMP6A17E6TA by Zetex Plc

ZXMP6A17E6TA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: Matte Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 40; Qualification: Not Qualified;
IRFP460 by Thomson Consumer Electronics

IRFP460

Thomson Consumer Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 20 A;
IRF9530PBF by Vishay Intertechnology

IRF9530PBF

Vishay Intertechnology

Vishay Intertechnology's IRF9530PBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 48A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.3 ohm RDS(on), and 88W max power dissipation.
IPD90P04P4L04ATMA1 by Infineon Technologies

IPD90P04P4L04ATMA1

Infineon Technologies

IPD90P04P4L04ATMA1 by Infineon Technologies is a P-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 360A and a max drain-source on resistance of 0.0043 ohm. This transistor is commonly used in applications requiring high power and low resistance.
SIA456DJ-T1-GE3 by Vishay Intertechnology

SIA456DJ-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIA456DJ-T1-GE3 is a N-channel Power FET with 200V DS breakdown voltage and 2.6A max drain current. Ideal for switching applications, it operates in enhancement mode with 55ns turn on time and 75ns turn off time. Suitable for surface mount, this transistor has a max power dissipation of 19W in a small outline package.
IRLML6401TR by Shenzhen Changyuntong Ic Design

IRLML6401TR

Shenzhen Changyuntong Ic Design

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Position: DUAL; Maximum Turn On Time (ton): 43 ns;
IRF640NSTRLPBF by International Rectifier

IRF640NSTRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 18 A; Peak Reflow Temperature (C): 260;
IRF9530 by Fairchild Semiconductor

IRF9530

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI4946BEY-T1-GE3 by Vishay Intertechnology

SI4946BEY-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI4946BEY-T1-GE3 is an N-channel power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 30A and an avalanche energy rating of 7.2mJ. This transistor is suitable for applications requiring high power dissipation and fast switching times.
DMP3056L-7 by Diodes Incorporated

DMP3056L-7

Diodes Incorporated

DMP3056L-7 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage and 20A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.05 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount designs, it has a small outline package style and can withstand temperatures as low as -55°C.
SI7116DN-T1-E3 by Vishay Intertechnology

SI7116DN-T1-E3

Vishay Intertechnology

SI7116DN-T1-E3 by Vishay Intertechnology is an N-CHANNEL FET with 40V DS Breakdown Voltage, 60A IDM, and 0.0078 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 3.8W.
AUIRFN8459TR by International Rectifier

AUIRFN8459TR

International Rectifier

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; No. of Terminals: 6; Avalanche Energy Rating (EAS): 66 mJ;
2N7002 by Telcom Semiconductor

2N7002

Telcom Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
SCT3080KLGC11 by ROHM

SCT3080KLGC11

ROHM

ROHM's SCT3080KLGC11 is a N-CHANNEL FET with 1200V DS breakdown voltage and 77A IDM. Ideal for switching applications, it features a single configuration with built-in diode and 0.104 ohm max drain-source resistance.
JANTX2N6796 by Intersil

JANTX2N6796

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Terminal Position: BOTTOM; Maximum Drain Current (Abs) (ID): 8 A;
BSS138AKAR by NXP Semiconductors

BSS138AKAR

NXP Semiconductors

NXP Semiconductors' BSS138AKAR is a single N-channel FET with max drain current of 0.2A and power dissipation of 0.36W. Ideal for applications requiring enhancement mode operation, such as in power management circuits or low voltage switching applications at up to 150°C operating temperature.
IRF540NSTRLPBF by Infineon Technologies

IRF540NSTRLPBF

Infineon Technologies

IRF540NSTRLPBF by Infineon Technologies is a N-CHANNEL FET with 100V DS Breakdown Voltage, suitable for SWITCHING applications. It has a max Drain Current of 33A and Power Dissipation of 130W. The transistor operates in ENHANCEMENT MODE and features a built-in DIODE, making it ideal for high-power switching circuits.
JANTX2N6796 by Omnirel

JANTX2N6796

Omnirel

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; JESD-30 Code: O-MBCY-W3; Terminal Finish: Tin/Lead (Sn/Pb);
IRFS7530TRL7PP by International Rectifier

IRFS7530TRL7PP

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; No. of Elements: 1; JESD-609 Code: e3;
IRF9310TRPBF by Infineon Technologies

IRF9310TRPBF

Infineon Technologies

Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Qualification: Not Qualified; Maximum Drain Current (Abs) (ID): 20 A;