Infineon Technologies - BSO612CVG

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BSO612CVG by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSO612CVG
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .12 ohm; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 260;
Datasheet BSO612CVG Datasheet
In Stock202
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 47 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 3 A
Maximum Pulsed Drain Current (IDM): 12 A
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .12 ohm
Moisture Sensitivity Level (MSL): 3
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