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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | BSO612CVGHUMA1 |
Description | N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: NICKEL PALLADIUM GOLD SILVER; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY; |
Datasheet | BSO612CVGHUMA1 Datasheet |
In Stock | 84 |
NAME | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 47 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 3 A |
Maximum Pulsed Drain Current (IDM): | 12 A |
Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | NICKEL PALLADIUM GOLD SILVER |
JESD-609 Code: | e4 |
No. of Terminals: | 8 |
Minimum DS Breakdown Voltage: | 60 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | AVALANCHE RATED |
Reference Standard: | AEC-Q101 |
Maximum Drain-Source On Resistance: | .12 ohm |
Moisture Sensitivity Level (MSL): | 3 |