Infineon Technologies - BSO612CVGHUMA1

BSO612CVGHUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSO612CVGHUMA1
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: NICKEL PALLADIUM GOLD SILVER; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
Datasheet BSO612CVGHUMA1 Datasheet
In Stock84
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 47 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 3 A
Maximum Pulsed Drain Current (IDM): 12 A
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD SILVER
JESD-609 Code: e4
No. of Terminals: 8
Minimum DS Breakdown Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Maximum Drain-Source On Resistance: .12 ohm
Moisture Sensitivity Level (MSL): 3
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Pricing (USD)

Qty. Unit Price Ext. Price
84 $0.347 $29.148

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