BSO612CVGHUMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSO612CVGHUMA1
Description	N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: NICKEL PALLADIUM GOLD SILVER; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
Datasheet	BSO612CVGHUMA1 Datasheet
In Stock	1,245

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	3 A
Maximum Pulsed Drain Current (IDM):	12 A
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD SILVER
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.12 ohm
Moisture Sensitivity Level (MSL):	3
Avalanche Energy Rating (EAS):	47 mJ
Other Names:	BSO612CVGHUMA1TR BSO612CVGHUMA1DKR 2156-BSO612CVGHUMA1 BSO612CVXTINCT BSO612CVXTINCT-ND BSO612CVGXT BSO612CVXTINTR-ND BSO612CVT BSO612CVGINTR-ND BSO612CVGINTR BSO612CVGINDKR-ND BSO612CVGINCT-ND INFINFBSO612CVGHUMA1 BSO612CVGT BSO612CVXTINTR BSO612CVGHUMA1CT BSO612CVGINDKR BSO612CV G SP000216307 BSO612CVG BSO612CV G-ND
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
JESD-609 Code:	e4
Minimum DS Breakdown Voltage:	60 V
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,245	-	-

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