Infineon Technologies - BSO615NGXT

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BSO615NGXT by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSO615NGXT
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8;
Datasheet BSO615NGXT Datasheet
In Stock724
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 60 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2.6 A
Maximum Pulsed Drain Current (IDM): 10.4 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 8
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .15 ohm
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